Journal
ADVANCED MATERIALS
Volume 20, Issue 5, Pages 924-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200702081
Keywords
-
Ask authors/readers for more resources
A novel memory cell structure with a Pt/Ti-doped NiO/Pt architecture is shown to exhibit the lowest write current reported thus far for a unipolar switching resistance-change-based device, as shown in the figure. The write current decreases dramatically upon scaling to cell sizes smaller than 100 nm x 100 nm. High-density universal memory can be fabricated by combining this node element with a selective switch.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available