Journal
ADVANCED MATERIALS
Volume 20, Issue 19, Pages 3657-3662Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200800555
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High-quality Cu(In,Ga)Se-2 (CIGS) films are deposited from hydrazine-based solutions and are employed as absorber layers in thin-film photovoltaic devices. The CIGS films exhibit tunable stoichiometry and well-formed grain structure without requiring post-deposition high-temperature selenium treatment. Devices based on these films offer power conversion efficiencies of 10% (AM1.5 illumination).
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