Organic Light-Emitting Field-Effect Transistors Operated by Alternating-Current Gate Voltages

Organic light-emitting field-effect transistors are operate by a novel method characterized by the application of ac voltages to the gate electrode. This prompts carrier injection from both source and drain electrodes into the ogranic layer (a thin film or a crystal) without altering the device constitution. Stronger emissions are observed from the device with increasing gate voltage frequencies.