4.8 Article

Patterned graphene as source/drain electrodes for bottom-contact organic field-effect transistors

Journal

ADVANCED MATERIALS
Volume 20, Issue 17, Pages 3289-+

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200800150

Keywords

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Funding

  1. National Natural Science Foundation of China [60671047, 60736004, 50673093, 20421101]
  2. Major State Basic Research Development Program [2006CB806203, 2006CB932103]
  3. Chinese Academy of Sciences

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Graphene, which is a basic building, block of graphite, fullerene, and carbon nanotubes, is patterned effectively by a simple approach involving vapor deposition on Cu or Ag electrodes that were patterned on a highly n-doped silicon wafer with a thermally oxidized SiO2 dielectric layer (see figure). The patterned graphene could serve as excellent bottom-contact electrodes for high-performance organic field-effect transistors.

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