4.8 Article

Transparent Inverted Organic Light-Emitting Diodes with a Tungsten Oxide Buffer Layer

Journal

ADVANCED MATERIALS
Volume 20, Issue 20, Pages 3839-+

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200800949

Keywords

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Funding

  1. German Federal Ministry for Education and Research BMBF [FKZ 13N8995, 01BD351]
  2. Deutsche Forschungsgemeinschaft (DFG) through the Gottfried Wilhelm Leibniz award

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Highly efficient transparent OLEDs are demonstrated. A novel WO3 buffer layer protects the organics during the sputter deposition of the top ITO electrode. L-J-V and SIMS analysis yield optimized devices with a 60 nm thick WO3 layer. Very high efficiencies of 38cdA(-1) and 30 lm W-1 at 100 cd m(-2) are obtained. At the same time the transmittance throughout the visible part of the spectrum exceeds 75%.

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