Journal
ADVANCED MATERIALS
Volume 20, Issue 21, Pages 4124-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200801199
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Funding
- Ministry of Education, Culture, Sports, Science and Technology of Japan [19017007]
- Grants-in-Aid for Scientific Research [19017007] Funding Source: KAKEN
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The unexpected SOFC hetero-epitaxial system with large lattice mismatch is demonstrated. A (110)-oriented flat epitaxial film of Nd2NiO4+delta is successfully grown on the (100) surface of yttrium-stabilized zirconia, which realizes selective exposure of the active surface for oxygen reduction. The charge-transfer process is analyzed to be the rate-limiting step with a simple impedance model.
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