High-mobility ambipolar near-infrared light-emitting polymer field-effect transistors

A polymer semiconductor with ambipolar charge transport properties, BBTDPP1, is presented. Solution-processed ambipolar field-effect transistors based on this material exhibit hole and electron mobilities of 0.1 cm(2) V-1 s(-1) and up to 0.09 cm(2) V-1 s(-1), respectively. Near-infrared light emission from top-gate as well as bottom-gate ambipolar field-effect transistors based on BBTDPP1 is also reported.