Journal
ADVANCED MATERIALS
Volume 20, Issue 16, Pages 3066-3069Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200702932
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Room-temperature-deposited CuOx/InZnOx thin-film heteroJunction diodes show a high current density of 3.5 X 10(4) A cm(-2) and a high on/off current ratio of 10(6) (see figure). The oxide diode is a promising switch element for three-dimensional stackable memory devices, where high-temperature-prepared silicon diodes are difficult to apply.
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