Grain Orientation Mapping of Polycrystalline Organic Semiconductor Films by Transverse Shear Microscopy

A scanning probe technique, termed transverse shear microscopy, produces striking images of grain size, shape, and crystallographic orientation in ultrathin layers of polycrystalline organic semiconductors. The key feature of this novel technique is its ability to generate Grain Orientation Maps that facilitate quantitative analysis of grain alignment and the angular distribution of GBs.