Journal
ADVANCED MATERIALS
Volume 20, Issue 17, Pages 3258-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200703210
Keywords
-
Categories
Funding
- Ministry of Science and Technology [2006CB932400]
- National Science Foundation of China [10434010, 90606026, 60571002]
Ask authors/readers for more resources
A barrier-free bipolar diode (BFBD) and an ambipolar field-effect transistor (FET) are fabricated based on a doping-free carbon nanotube (CNT) CMOS inverter. The basic CNT device unit consists of two Pd and two Sc electrodes deposited side-by-side on a single CNT, and can be used as an n-FET, p-FET, CMOS inverter, and high-performance ambipolar FET and BFBD in which both electrons and holes contribute effectively to the forward current.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
