Journal
ADVANCED MATERIALS
Volume 20, Issue 19, Pages 3697-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200800810
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Funding
- NSF-STC Program [DMR-0120967]
- Boeing-Johnson Foundation
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Anthryl-alkyl-PA (pi-sigma-PA) self-assembled monolayers (SAMs)/hafnium oxide (HfO2) hybrid dielectrics have been integrated into organic thin film transistors (OTFTs) to achieve operating voltages under -1.5V. Using pi-sigma-PA SAMs on sol-gel processed HfO2, pentacene-based OTFTs possess low subthreshold slopes (100 mV dec(-1)), high on-off current ratios (10(5)-10(6)), and hole mobilities as high as 0.22 cm(2) V-(1) s(-1).
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