4.8 Article

π-σ-Phosphonic Acid Organic Monolayer/Sol-Gel Hafnium Oxide Hybrid Dielectrics for Low-Voltage Organic Transistors

Journal

ADVANCED MATERIALS
Volume 20, Issue 19, Pages 3697-+

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200800810

Keywords

-

Funding

  1. NSF-STC Program [DMR-0120967]
  2. Boeing-Johnson Foundation

Ask authors/readers for more resources

Anthryl-alkyl-PA (pi-sigma-PA) self-assembled monolayers (SAMs)/hafnium oxide (HfO2) hybrid dielectrics have been integrated into organic thin film transistors (OTFTs) to achieve operating voltages under -1.5V. Using pi-sigma-PA SAMs on sol-gel processed HfO2, pentacene-based OTFTs possess low subthreshold slopes (100 mV dec(-1)), high on-off current ratios (10(5)-10(6)), and hole mobilities as high as 0.22 cm(2) V-(1) s(-1).

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available