Journal
ADVANCED MATERIALS
Volume 20, Issue 23, Pages 4557-4562Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200800691
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Funding
- Ministry of Science and Technology of Korea
- Korea Science and Engineering Foundation (KOSEF)
- Program for Integrated Molecular Systems at GIST
- Korean Ministry of Commerce, Industry and Energy
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Inorganic field-effect transistors are fabricated using ZnO and In2O3 nanowires on flexible plastic substrates and their electronic characteristics are measured under different bending conditions. The electrical properties of bent nanowire flexible transistors can be understood by the piezoelectric effect and the electron trapping at the interfaces between the nanowire and the polymer dielectric.
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