Direct observation of inversion domain boundaries of GaN on c-sapphire at sub-Angstrom resolution

Inversion domain boundaries (IDBs) of GaN are studied by a high-resolution technique. The IDB separates adjacent domains of opposite polarity. The image shows a GaN IDB in the [(2) over bar 110] projection. The theoretical IDB structure fits the experimentally obtained structure well. The inset is an image acquired from a very thin region on the right side of the IDB. It can indicate the polarity of GaN directly.