Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 28, Issue 45, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201802954
Keywords
2D materials; low dark current; metal-semiconductor-metal; self-driven photodetectors
Categories
Funding
- Science and Technology Program of Guangzhou [201804010393]
- International Science & Technology Cooperation Plan in Science and Technology Program of Guangzhou [201807010072]
- Planned Science and Technology Project of Guangdong Province, China [2015B090901048, 2017B090901068]
- Research Grant Council of Hong Kong [PolyU 152145/15E]
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Self-driven photodetectors have wide applications in wireless sensor networks and wearable physiological monitoring systems. While 2D materials have different bandgaps for potential novel application fields, the self-driven photodetectors are mainly built on PN junctions or heterostructures, whose fabrication involves doping or reliable multiple transfer steps. In this study, a novel metal-semiconductor-metal (MSM) WSe2 photodetector with asymmetric contact geometries is proposed. A high responsivity of 2.31 A W-1 is obtained under zero bias, and a large open-circuit voltage of 0.42 V is achieved for an MSM photodetector with a large contact length difference. The MSM photodetector can overcome the disadvantage of high dark current in traditional MSM photodetectors. A small dark current of approximate to 1 fA along with a high detectivity of 9.16 x 10(11) Jones is achieved. The working principles and finite element analysis are presented to explain the origin of the self-driven property and its dependence on the degree of asymmetry.
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