4.8 Article

Doping-Free Organic Light-Emitting Diodes with Very High Power Efficiency, Simple Device Structure, and Superior Spectral Performance

Journal

ADVANCED FUNCTIONAL MATERIALS
Volume 24, Issue 30, Pages 4746-4752

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201400597

Keywords

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Funding

  1. United States' NSF [CHE-0911690, CMMI-0963509, CHE-0840518, CHE-1004878]
  2. Robert A. Welch Foundation [B-1542]
  3. NSF CAREER [ECCS-0950731]
  4. SRFDP [20130201120048]
  5. Directorate For Engineering
  6. Div Of Electrical, Commun & Cyber Sys [0950731] Funding Source: National Science Foundation

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Today's state-of-the-art phosphorescent organic light-emitting diodes (PhOLEDs) must rely on the host-guest doping technique to decrease triplet quenching and increase device efficiency. However, doping is a sophisticated device fabrication process. Here, a Pt(II)-based complex with a near unity photoluminescence quantum yield and excellent electron transporting properties in the form of neat film is reported. Simplified doping-free white PhOLED and yellow-orange PhOLED based on this emitter achieve rather low operating voltages (2.2-2.4 V) and very high power efficiencies of approximately 80 lm W-1 (yellow-orange) and 50 lm W-1 (white), respectively, without any light extraction enhancement. Furthermore, the efficient white device also exhibits high color stability. No color shift is observed during the entire operation of the device. Analysis of the device's operational mechanism has been postulated in terms of exciton and polaron formation and fate. It is found that using the efficient neat Pt(II)-complex as a homogeneous emitting and electron transporting layer and an ambipolar blue emitter are determining factors for achieving such a high efficiency.

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