4.8 Article

Improved Exciton Dissociation at Semiconducting Polymer:ZnO Donor:Acceptor Interfaces via Nitrogen Doping of ZnO

Journal

ADVANCED FUNCTIONAL MATERIALS
Volume 24, Issue 23, Pages 3562-3570

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201303994

Keywords

hybrid photovoltaics; P3HT; zinc oxide; doping; Kelvin probe microscopy

Funding

  1. EPSRC [RGS3717]
  2. Marie Curie program [219332]
  3. Ramon y Cajal program from the Spanish MICINN
  4. European Social Fund
  5. Comissionat per a Universitats i Recerca (CUR) del DIUE de la Generalitat de Catalunya, Spain
  6. ERC [ERC-2009-adG247276]
  7. EPSRC [EP/H040218/2] Funding Source: UKRI

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Exciton dissociation at the zinc oxide/poly(3-hexylthiophene) (ZnO/P3HT) interface as a function of nitrogen doping of the zinc oxide, which decreases the electron concentration from approximately 10(19) cm(-3) to 10(17) cm(-3), is reported. Exciton dissociation and device photocurrent are strongly improved with nitrogen doping. This improved dissociation of excitons in the conjugated polymer is found to result from enhanced light-induced de-trapping of electrons from the surface of the nitrogen-doped ZnO. The ability to improve the surface properties of ZnO by introducing a simple nitrogen dopant has general applicability.

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