Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 24, Issue 32, Pages 5157-5163Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201400348
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Funding
- Department of Energy through EFRC program [DE-SC0001085]
- National Science Foundation [DMR-1122594]
- Center on Functional Engineered Nano Architectonics (FENA) [2009-NT-2048, UCLA 0160 S MB 959]
- National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [2014R1A1A1004632]
- Creative Research Program of ETRI [14ZE1110]
- U.S. Department of Energy (DOE) [DE-SC0001085] Funding Source: U.S. Department of Energy (DOE)
- National Research Foundation of Korea [2014R1A1A1004632] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Enhancing the device performance of single crystal organic field effect transistors (OFETs) requires both optimized engineering of efficient injection of the carriers through the contact and improvement of the dielectric interface for reduction of traps and scattering centers. Since the accumulation and flow of charge carriers in operating organic FETs takes place in the first few layers of the semiconductor next to the dielectric, the mobility can be easily degraded by surface roughness, charge traps, and foreign molecules at the interface. Here, a novel structure for high-performance rubrene OFETs is demonstrated that uses graphene and hexagonal boron nitride (hBN) as the contacting electrodes and gate dielectric layer, respectively. These heterostacked OFETs are fabricated by lithography-free dry-transfer method that allows the transfer of graphene and hBN on top of an organic single crystal, forming atomically sharp interfaces and efficient charge carrier-injection electrodes without damage or contamination. The resulting heterostructured OFETs exhibit both high mobility and low operating gate voltage, opening up new strategy to make high-performance OFETs and great potential for flexible electronics.
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