Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 24, Issue 40, Pages 6252-6261Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201400850
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Funding
- National Research Foundation of Korea (NRF) grant - Korean Government (MSIP) [NRF-2014R1A2A2A01007159]
- Center for Advanced Soft-Electronics - Ministry of Science, ICT & Future Planning, the National Research Foundation of Korea (NRF) - Korea government (MSIP) [2013M3A6A5073183, 2013-059210]
- Dongguk University Research Fund
- National Research Council of Science & Technology (NST), Republic of Korea [14-12-N0101-14] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2010-0029212, 2013M3A6A5073183, 2014R1A2A2A01007159] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The selective tuning of the operational mode from ambipolar to unipolar transport in organic field-effect transistors (OFETs) by printing molecular dopants is reported. The field-effect mobility (mu(FET)) and onset voltage (V-on) of both for electrons and holes in initially ambipolar methanofullerene [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) OFETs are precisely modulated by incorporating a small amount of cesium fluoride (CsF) n-type dopant or tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) p-type dopant for n-channel or p-channel OFETs either by blending or inkjet printing of the dopant on the pre-deposited semiconductor. Excess carriers introduced by the chemical doping compensate traps by shifting the Fermi level (E-F) toward respective transport energy levels and therefore increase the number of mobile charges electrostatically accumulated in channel at the same gate bias voltage. In particular, n-doped OFETs with CsF show gate-voltage independent Ohmic injection. Interestingly, n- or p-doped OFETs show a lower sensitivity to gate-bias stress and an improved ambient stability with respect to pristine devices. Finally, complementary inverters composed of n- and p-type PCBM OFETs are demonstrated by selective doping of the pre-deposited semiconductor via inkjet printing of the dopants.
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