Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 24, Issue 32, Pages 5086-5095Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201400064
Keywords
-
Categories
Funding
- Converging Research Center Program through a National Research Foundation of Korea (NRF) - Ministry of Education, Science, and Technology of the Republic of Korea [2013K000158]
- Global Research Laboratory Program through an NRF grant [2012040157]
- National Research Foundation of Korea [2012K1A1A2040157, 2010-50170] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
The development of a resistance switching (RS) memory cell that contains rectification functionality in itself, highly reproducible RS performance, and electroforming-free characteristics is an impending task for the development of resistance switching random access memory. In this work, a two-layered dielectric structure consisting of HfO2 and Ta2O5 layers, which are in contact with the TiN and Pt electrode, is presented for achieving these tasks simultaneously in one sample configuration. The HfO2 layer works as the resistance switching layer by trapping or detrapping of electronic carriers, whereas the Ta2O5 layer remains intact during the whole switching cycle, which provides the rectification. With the optimized structure and operation conditions for the given materials, excellent RS uniformity, electroforming-free, and self-rectifying functionality could be simultaneously achieved from the Pt/Ta2O5/HfO2/TiN structure.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available