Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 24, Issue 5, Pages 645-658Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201301847
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Funding
- Defense Advanced Research Projects Agency (DARPA)
- National Science Foundation (NSF) [DMR-12-42240]
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Reactive dissolution and its effects on electrical conduction, morphological change and chemical transformation in thin films of Mg, AZ31B Mg alloy, Zn, Fe, W, and Mo in de-ionized (DI) water and simulated body fluids (Hanks' solution pH 5-8) are systematically studied, to assess the potential for use of these metals in water-soluble, that is, physically transient, electronics. The results indicate that the electrical dissolution rates in thin films can be much different that traditionally reported corrosion rates in corresponding bulk materials. Silicon metal oxide field effect transistors (MOSFETs) built with these metals demonstrate feasibility for use in transient electronics.
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