Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 23, Issue 26, Pages 3329-3334Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201202822
Keywords
graphene; semi-ionic fluorination; transition from insulator to graphene; covalent C-F bond; ionic C-F bond; add-atom engineering
Categories
Funding
- Basic Science Research Program, National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2009-0083540, 2012R1A6A3A03039277]
- Postdoctoral Research Program of Sungkyunkwan University
- Singapore National Research Foundation [NRF-RF2008-07, NRF-CRP (R-144-000-295-281), NRF-POC002-038, NUS-YIA(R144-000-283-101), IMRE/10-1C0109, NUS/SMF]
- A*STAR SERC TSRP-Integrated Nanophoto-Bio Interface [R-144-000-275-305]
- NUS NanoCore
- National Research Foundation of Korea [2012R1A6A3A03039277] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Semi-ionically fluorinated graphene (s-FG) is synthesized with a one step liquid fluorination treatment. The s-FG consists of two different types of bonds, namely a covalent C-F bond and an ionic C-F bond. Control is achieved over the properties of s-FG by selectively eliminating ionic C-F bonds from the as prepared s-FG film which is highly insulating (current < 10(-13) A at 1 V). After selective elimination of ionic C-F bonds by acetone treatment, s-FG recovers the highly conductive property of graphene. A 10(9) times increase in current from 10(-13) to 10(-4)A at 1 V is achieved, which indicates that s-FG recovers its conducting property. The properties of reduced s-FG vary according to the number of layers and the single layer reduced s-FG has mobility of more than 6000 cm(2) V-1 s(-1). The mobility drastically decreases with increasing number of layers. The bi-layered s-FG has a mobility of 141cm(2) V-1 s(-1) and multi-layered s-FG film showed highly p-type doped electrical property without Dirac point. The reduction via acetone proceeds as 2C(2)F((semi-ionic)) + CH3C(O)CH3(l) HF + 2C((s)) + C2F(covalent) + CH3C(O)CH2(l). The fluorination and reduction processes permit the safe and facile non-destructive property control of the s-FG film.
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