4.8 Article

The Role of Hierarchical Morphologies in the Superior Gas Sensing Performance of CuO-Based Chemiresistors

Journal

ADVANCED FUNCTIONAL MATERIALS
Volume 23, Issue 14, Pages 1759-1766

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201202332

Keywords

copper(II) oxide; gas sensors; morphology; urchin-like structures; semiconductors

Funding

  1. Sao Paulo Research Foundation (FAPESP) [Proc. 2010-51959-8, Proc. 2011/02408-1]
  2. National Council for Scientific and Technological Development (CNPq) [Proc. 200703/2011-3]
  3. Korea Research Council Industrial Science and Technology, Republic of Korea
  4. [B551179-10-01-00]
  5. Fundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP) [11/02408-1] Funding Source: FAPESP

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The development of gas sensors with innovative designs and advanced functional materials has attracted considerable scientific interest given their potential for addressing important technological challenges. This work presents new insight towards the development of high-performance p-type semiconductor gas sensors. Gas sensor test devices, based on copper (II) oxide (CuO) with innovative and unique designs (urchin-like, fiber-like, and nanorods), are prepared by a microwave-assisted synthesis method. The crystalline composition, surface area, porosity, and morphological characteristics are studied by X-ray powder diffraction, nitrogen adsorption isotherms, field-emission scanning electron microscopy and high-resolution transmission electron microscopy. Gas sensor measurements, performed simultaneously on multiple samples, show that morphology can have a substantial influence on gas sensor performance. An assembly of urchin-like structures is found to be most effective for hydrogen detection in the range of parts-per-million at 200 degrees C with 300-fold larger response than the previously best reported values for semiconducting CuO hydrogen gas sensors. These results show that morphology plays an important role in the gas sensing performance of CuO and can be effectively applied in the further development of gas sensors based on p-type semiconductors.

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