N-Type Self-Assembled Monolayer Field-Effect Transistors and Complementary Inverters

This work describes n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N-type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 mu m. Highly reproducible transistors with electron mobilities of 1.5 x 10(-3) cm(2)V(-1) s(-1) and on/off current ratios up to 10(5) are obtained. By implementing n-type and p-type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time.