Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 23, Issue 3, Pages 291-297Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201201264
Keywords
solution processing; thin-film growth; organic field-effect transistors; in situ characterization; Avrami model
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Funding
- KAUST's Office of Competitive Research Funds [FIC/2010/04]
- National Science Foundation [NSF DMR-0225180]
- NIH-NIGMS
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A new way to investigate and control the growth of solution-cast thin films is presented. The combination of in situ quartz crystal microbalance measurements with dissipation capabilities (QCM-D) and in situ grazing-incidence wide-angle X-ray scattering (GIWAXS) in an environmental chamber provides unique quantitative insights into the time-evolution of the concentration of the solution, the onset of nucleation, and the mode of growth of the organic semiconductor under varied drying conditions. It is demonstrated that careful control over the kinetics of solution drying enhances carrier transport significantly by promoting phase transformation predominantly via heterogeneous nucleation and sustained surface growth of a highly lamellar structure at the solid-liquid interface at the expense of homogeneous nucleation.
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