Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 23, Issue 7, Pages 832-838Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201201693
Keywords
electron localization; spin-transport; magnetoresistance; conductivity
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Funding
- DFG [FOR 1464 ASPIMATT (1.2-A)]
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A new scheme dedicated to improving spin-transport characteristics by applying random disorder as a constructive agent is reported. The approach paves the way for the construction of novel systems with a surprising combination of properties, which are either extremely rare or even entirely absent within the known classes of ordered materials: half-metals with no net magnetization and magnetic semiconductors. As a real case example for the applicability of the scheme, it is shown that a series of such materials can be derived from the tetragonal Heusler compound Mn3Ga by substituting Mn with a 3d-transition metal.
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