Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 22, Issue 6, Pages 1209-1214Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201102266
Keywords
organic electronics; thin-film transistors; self-alignment; aluminum anodization
Categories
Funding
- ORICLA [247798]
- Chalmers Strategic Initiative in Production
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An upscalable, self-aligned patterning technique for manufacturing high- performance, flexible organic thin-film transistors is presented. The structures are self-aligned using a single-step, multi-level hot embossing process. In combination with defect-free anodized aluminum oxide as a gate dielectric, transistors on foil with channel lengths down to 5 mu m are realized with high reproducibility. Resulting on-off ratios of 4 x 106 and mobilities as high as 0.5 cm2 V-1 s-1 are achieved, indicating a stable process with potential to large-area production with even much smaller structures.
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