Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 21, Issue 6, Pages 1095-1101Publisher
WILEY-BLACKWELL
DOI: 10.1002/adfm.201002252
Keywords
-
Categories
Funding
- US NSF [DMR-0819762]
- US Army Research Office through the ISN at MIT [W911NF-07-D-0004]
- RLE
- CMSE
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [819762] Funding Source: National Science Foundation
Ask authors/readers for more resources
We demonstrate the first rewritable memory in thermally drawn fibers. A high tellurium-content chalcogenide glass, contacted by metallic electrodes internal to the fiber structure, is drawn from a macroscopic preform. An externally applied voltage is utilized to switch between a high resistance (OFF) and a low resistance (ON) state; this in turn allows the fibers to function as a memory device reminiscent of the ovonic switch. The difference between the ON and OFF states is found to be four orders of magnitude. The glass-crystal phase transition is localized to micrometer-wide filaments, whose position can be optically controlled along the fiber axis. An architecture that enabled the encoding of multiple bits per fiber is described.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available