Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 21, Issue 18, Pages 3482-3487Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201100580
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Funding
- World Premier International Research Center Initiative on Materials Nanoarchitronics, MEXT, Japan
- NEDO [06A22702d]
- MEXT, Japan [208591, 23107533]
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An important challenge in current microelectronics research is the development of techniques for making smaller, higher-performance electronic components. In this context, the fabrication and integration of ultrathin high-kappa dielectrics with good insulating properties is an important issue. Here, we report on a rational approach to produce high-performance nanodielectrics using one-nanometer-thick oxide nanosheets as a building block. In titano niobate nanosheets (TiNbO5, Ti2NbO7, Ti5NbO14), the octahedral distortion inherent to site-engineering by Nb incorporation results in a giant molecular polarizability, and their multilayer nanofilms exhibit a high dielectric constant (160-320), the largest value seen so far in high-kappa nanofilms with thickness down to 10 nm. Furthermore, these superior high-kappa properties are fairly temperature-independent with low leakage-current density (< 10(-7) A cm(-2)). This work may provide a new recipe for designing nanodielectrics desirable for practical high-kappa devices.
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