4.8 Article

Digital-Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors

Journal

ADVANCED FUNCTIONAL MATERIALS
Volume 21, Issue 22, Pages 4314-4319

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201101324

Keywords

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Funding

  1. National Institute of Environmental Health Sciences [ES 07141]
  2. NSF [0730926]
  3. AFOSR [FA9550-09-1-0259]
  4. Johns Hopkins Center
  5. Div Of Chem, Bioeng, Env, & Transp Sys
  6. Directorate For Engineering [0730926] Funding Source: National Science Foundation

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Chemiresistors and sensitive organic field-effect transistors (OFETs) have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Higher order logic circuits utilizing OFETs sensitive to amine vapors are presented. The circuits depend on the synergistic responses of paired p- and n-channel organic semiconductors, including a rare analyte-induced current increase by the n-channel semiconductor. This is the first step towards intelligent sensors that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.

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