Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 20, Issue 5, Pages 698-702Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.200901734
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Funding
- EPSRC
- Konarka
- BP Solar
- Carbon Trust
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Here, a new methodology for analyzing the charge-density dependence of carrier mobility in organic semiconductors, applicable to the low-charge-density regime (10(14)-10(17) cm(-3)) corresponding to the operation conditions of many organic optoelectronic devices, is reported. For the P3HT/PCBM blend photovoltaic devices studied herein, the hole mobility mu is found to depend on charge density n according to a power law mu(n) alpha n(delta), where delta = 0.35. This dependence is shown to be consistent with an energetic disorder model based upon an exponential tail of localized intra-band states.
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