Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 20, Issue 20, Pages 3577-3582Publisher
WILEY-BLACKWELL
DOI: 10.1002/adfm.201001107
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Funding
- Ministry of Education, Science and Technology [R01-2008-000-20533-0, 2009-0064888, 2010-0015035, R32-2008-000-10124-0]
- Korea Ministry of Knowledge Economy [10033309]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10033309] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Ministry of Education, Science & Technology (MoST), Republic of Korea [R32-2008-000-10124-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2009-0093247, R01-2008-000-20533-0, 2009-0093249, 과C6A1804, 2009-0093248, 2009-0064888] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Stretchable and transparent thin film transistors (TFTs) with intrisically brittle oxide semiconductors are built using a wavy structural configuration that can provide high flexibility and stretchability. After device fabrication procedures including high temperature annealing, the oxide semiconductor-based TFT arrays can be transferred directly to plastic or rubber substrates, without an additional device process, using transfer printing methods. This procedure can avoid some of the thermal degradation problems associated with plastic or rubber substrates by separating them from the annealing procedure needed to improve the device performance. These design and fabrication methods offer the possibility of developing a new format of stretchable electronics.
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