Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 20, Issue 20, Pages 3555-3560Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201001047
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Funding
- National Science Council of Taiwan [NSC 98-2120-M-009-006]
- U.S. Air Force Office of Scientific Research [AOARD-094039]
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A thin poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) hole transport layer enhances the AM1.5 power conversion efficiency of a PbSe quantum dot (QD)-containing photovoltaic device to 2.4%, from 1.5% for a standard PbSe QD device, a relative increase of 60%. Synchrotron X-ray reflectivity measurements reveal that the roughness of the interfaces between the various layers decreases dramatically in the presence of the PEDOT: PSS layer. In addition, the device life time under continuous simulated AM1.5 irradiation (100 mW cm(-2)), measured in terms of the time required to reach 80% of the normalized efficiency, for the PbSe QD device incorporating the PEDOT:PSS hole transport layer is six times longer than that of the standard PbSe QD device.
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