Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 21, Issue 1, Pages 167-171Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201001328
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Funding
- Defense Advanced Research Projects Agency (DARPA)
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A PbSe solution-processed nanocrystal-based infrared photodetector incorporating carrier blocking layers is demonstrated, and significant reduction of dark current is achieved. Detectivity values close to 10(12) Jones are achieved by using poly[(9,9'-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butyl))diphenylamine)] (TFB) and ZnO nanocrystals (NC) as the electron blocker and hole blocker, respectively. An improvement in lifetime is also observed in the devices with the ZnO NCs hole blocking layer.
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