Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 19, Issue 2, Pages 272-276Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.200800933
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Funding
- NSFC [20772131, 20721061, 50725311]
- 973 Program [2006CB932100, 2006CB806200]
- Chinese Academy of Science
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A novel semiconductor based on annelated beta-trithiophenes is presented, possessing an extraordinary compressed packing mode combining edge-to, face pi-pi interactions and S ... S interactions in single crystals, which is favorable for more effective charge transporting. Accordingly, the device incorporating this semiconductor shows remarkably high charge carrier mobility, as high as 0.89 cm(2) V-1 s(-1), and an on/off ratio of 4.6 x 10(7) for vacuum-deposited thin films.
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