Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 19, Issue 11, Pages 1728-1735Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.200900028
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Funding
- MEXT [17069003, 17204022, 18710091, 17067009]
- Grants-in-Aid for Scientific Research [17204022, 18710091, 17067009] Funding Source: KAKEN
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A high-performance ambipolar light-emitting transistor (LET) that has high hole and electron mobilities and excellent luminescence charcteristics is described. By using this device, a conspicuous light-confined edge emission and current-density-dependent spectral evolution are observed. These findings will result in broader utilization of device potential and they provide a promising route for realizing electrically driven organic lasers.
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