Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 18, Issue 22, Pages 3678-3685Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.200800378
Keywords
-
Categories
Funding
- Ministry of Education, Science and Technology (MEST) of Korea
- National Research Laboratory (NRL) Program of Korea Science and Engineering Foundation (KOSEF) [F0004021]
- Ministry of Knowledge Economy [2008-F052-01]
- Program for Integrated Molecular Systems (PIMS)
- GIST
- Ministry of Education, Science & Technology (MoST), Republic of Korea [gist-06] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National IT Industry Promotion Agency (NIPA), Republic of Korea [A1100-0801-2990] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2005-01412] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
Organic non-volatile memory (ONVM) based on pentacene field-effect transistors (FETs) has been fabricated using various chargeable thin polymer gate dielectrics - termed electrets - onto silicon oxide insulating layers. The overall transfer curve of organic FETs is significantly shifted in both positive and negative directions and the shifts in threshold voltage (V-Th) can be systemically and reversibly controlled via relatively brief application of the appropriate external gate bias. The shifted transfer curve is stable for a relatively long time - more than 10(5) s. However, this significant reversible shift in V-Th is evident only in OFETs with non-polar and hydrophobic polymer electret layers. Moreover, the magnitude of the memory window in this device is inversely proportional to the hydrophilicity (determined from the water contact angle) and dielectric polarity (determined from the dielectric constant), respectively. Memory behaviors of ONVM originate from charge storage in polymer gate electret layers. Therefore, the small shifts in V-Th in ONVM with hydrophilic and polar polymers may be due to very rapid dissipation of transferred charges through the conductive channels which form from dipoles, residual moisture, or ions in the polymer electret layers. It is verified that the surface or bulk conductivities of polymer gate electret layers played a critical role in determining the non-volatile memory properties.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available