Journal
ADVANCED ENGINEERING MATERIALS
Volume 17, Issue 5, Pages 709-715Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adem.201400289
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Funding
- Nanoscale Research Facility (NRF) of IIT Delhi
- IIT Delhi
- Nanomission program of Department of Science and Technology (DST), New Delhi
- FP7 Project Fiblys [214042]
- FP7 Project Univsem [280566]
- FP7 Project LCAOS [258868]
- BMBF project Nawion [FKZ: 16SV5386K, V4MNI014]
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In this work, we have studied the synthesis of single crystalline self-catalyzed beta gallium oxide (-Ga2O3) nanostructures by chemical vapor deposition technique. We have adopted a new approach to grow the nanostructures instead of using conventional foreign metal nano-catalyst based-approaches. The as-grown nanostructures including nanowires and nanosheets (NSHs) were grown on spin-coated Ga2O3 films. The structural studies such as X-ray diffraction, Raman and transmission electron microscope (TEM) investigations on the nanostructures showed monoclinic phase of Ga2O3 and single crystalline structure. Furthermore, high-resolution TEM with a selected area electron diffraction pattern recorded on a single -Ga2O3 nanowire and nanosheet verified their single crystalline nature, having [001] as favorable growth direction. The energy dispersive X-ray spectroscopy-elemental mapping of as-grown nanostructures indicated uniform distribution of Ga and O. Cathodoluminescence imaging and spectrum revealed excellent luminescence characteristics of nanostructures with a broad UV-blue emission band (1.80-4.20eVnm) centered at 2.64eV. This study also highlights the growth mechanism of NSHs. These -Ga2O3 nanostructures have great potential in nanofunctional devices.
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