4.6 Article

Self-Catalytic Growth of -Ga2O3 Nanostructures by Chemical Vapor Deposition

Journal

ADVANCED ENGINEERING MATERIALS
Volume 17, Issue 5, Pages 709-715

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adem.201400289

Keywords

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Funding

  1. Nanoscale Research Facility (NRF) of IIT Delhi
  2. IIT Delhi
  3. Nanomission program of Department of Science and Technology (DST), New Delhi
  4. FP7 Project Fiblys [214042]
  5. FP7 Project Univsem [280566]
  6. FP7 Project LCAOS [258868]
  7. BMBF project Nawion [FKZ: 16SV5386K, V4MNI014]

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In this work, we have studied the synthesis of single crystalline self-catalyzed beta gallium oxide (-Ga2O3) nanostructures by chemical vapor deposition technique. We have adopted a new approach to grow the nanostructures instead of using conventional foreign metal nano-catalyst based-approaches. The as-grown nanostructures including nanowires and nanosheets (NSHs) were grown on spin-coated Ga2O3 films. The structural studies such as X-ray diffraction, Raman and transmission electron microscope (TEM) investigations on the nanostructures showed monoclinic phase of Ga2O3 and single crystalline structure. Furthermore, high-resolution TEM with a selected area electron diffraction pattern recorded on a single -Ga2O3 nanowire and nanosheet verified their single crystalline nature, having [001] as favorable growth direction. The energy dispersive X-ray spectroscopy-elemental mapping of as-grown nanostructures indicated uniform distribution of Ga and O. Cathodoluminescence imaging and spectrum revealed excellent luminescence characteristics of nanostructures with a broad UV-blue emission band (1.80-4.20eVnm) centered at 2.64eV. This study also highlights the growth mechanism of NSHs. These -Ga2O3 nanostructures have great potential in nanofunctional devices.

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