Journal
ADVANCED ENGINEERING MATERIALS
Volume 15, Issue 8, Pages 718-727Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adem.201300033
Keywords
-
Categories
Funding
- Defense Threat Reduction Agency (DTRA) [BRBAA08-C-2-0130, HDTRA1-13-1-0025]
- U.S. Nuclear Regulatory Commission Faculty Development Program Grant [NRC-38-08-950]
- U.S. Department of Energy (DOE) Nuclear Energy University Program (NEUP) [DE-NE0000325]
Ask authors/readers for more resources
With finite bandgaps, g-BNC, a boron nitride monolayer (g-BN) phase within a graphene layer, is a promising semiconductor for next generation electronics. We report its mechanics dependence of the g-BN concentration, including the high order elastic constants and mechanical failure, through a first-principles study based on density functional theory. The in-plane stiffness as well as third order elastic constants of graphene can be linearly tuned with g-BN concentration. The longitudinal mode elastic constants are sensitive to the BN modification, in contrast to the shear mode elastic constants. This study may provide guidance in optimizing the mechanics of graphene-based nanodevices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available