4.6 Article

Chemically Tuning Mechanics of Graphene by BN

Journal

ADVANCED ENGINEERING MATERIALS
Volume 15, Issue 8, Pages 718-727

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adem.201300033

Keywords

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Funding

  1. Defense Threat Reduction Agency (DTRA) [BRBAA08-C-2-0130, HDTRA1-13-1-0025]
  2. U.S. Nuclear Regulatory Commission Faculty Development Program Grant [NRC-38-08-950]
  3. U.S. Department of Energy (DOE) Nuclear Energy University Program (NEUP) [DE-NE0000325]

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With finite bandgaps, g-BNC, a boron nitride monolayer (g-BN) phase within a graphene layer, is a promising semiconductor for next generation electronics. We report its mechanics dependence of the g-BN concentration, including the high order elastic constants and mechanical failure, through a first-principles study based on density functional theory. The in-plane stiffness as well as third order elastic constants of graphene can be linearly tuned with g-BN concentration. The longitudinal mode elastic constants are sensitive to the BN modification, in contrast to the shear mode elastic constants. This study may provide guidance in optimizing the mechanics of graphene-based nanodevices.

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