Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 28, Issue 3, Pages 595-607Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.3431085
Keywords
elemental semiconductors; focused ion beam technology; gallium; scanning probe microscopy; secondary ion mass spectroscopy; silicon; sputter etching; transmission electron microscopy
Funding
- European Commission [515803-2]
- EU [FP6-2003-NMP-NI-3]
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Scanning probe microscopy techniques and, in particular, scanning spreading resistance microscopy (SSRM) were used for a detailed characterization of focused ion beam (FIB) induced damage in the surrounding of purposely irradiated areas on silicon. It is shown that the damaged area detected using these techniques extends up to several micrometers around the irradiated structures. The influence of the key FIB processing parameters on the FIB induced damage was examined. Parameters which were taken into account are the ion dose (from 10(12) to 10(18) cm(-2)), the milled structure size (circle diameters from 0.25 to 10 mu m), the beam energy (from 10 to 30 keV), and the beam current (from 1.5 to 280 pA). Moreover, the influence of the SSRM settings on the measurement results was investigated. Settings which were considered are the bias voltage and the force applied to the tip during the SSRM analysis. High resolution transmission electron microscopy and secondary ion mass spectroscopy analyses were performed to validate the SSRM results. Scattering between Ga ions and residual gas particles in the vacuum chamber of the FIB tool is identified as the main reason for the observed damaged area. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3431085]
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