Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 28, Issue 3, Pages -Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.3430544
Keywords
atomic force microscopy; elemental semiconductors; graphite; piezoelectric devices; scanning tunnelling microscopy; sensors; silicon
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Combined atomic-resolution scanning tunneling microscopy (STM) and noncontact atomic-force microscopy (NC-AFM) studies are carried out with the piezoelectric KolibriSensor in ultrahigh vacuum at room temperature. The sensor exhibits a very low spectral deflection noise density of only 6.5 fm/root Hz which favors in combination with its high spring constant of 540 000 N/m stable NC-AFM operation at subnanometer oscillation amplitudes. The authors present atomic-resolution imaging on the Si(111)(7x7) surface recorded in STM and NC-AFM feedback mode. They find that the tip surface distance during atomic-resolution imaging on silicon is much smaller for NC-AFM compared to STM. It is shown that atomic-resolution NC-AFM and dynamic STM images of the same area on the Si(111)(7x7) surface enable a discrimination of vacancies and adsorbates. Furthermore, the topography of graphite imaged in dynamic STM and NC-AFM feedback mode is compared. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3430544]
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