Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 28, Issue 3, Pages -Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.3374436
Keywords
antimony; germanium; II-VI semiconductors; magnesium compounds; molecular beam epitaxial growth; p-n junctions; secondary ion mass spectroscopy; semiconductor diodes; semiconductor heterojunctions; wide band gap semiconductors; X-ray diffraction; zinc compounds
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ZnO double heterojunction structure was grown by molecular beam epitaxy. 100 nm MgZnO/ZnO/MgZnO well was inserted between Ga-doped ZnO and Sb-doped ZnO layers. X-ray diffraction spectrum confirmed the preferential growth along c-direction and secondary ion mass spectroscopy measurements showed a clear double heterojunction profile of this structure. Thin MgZnO layers made no difficulties for electrons and holes to get into active intrinsic ZnO layer. Dominant ultraviolet electroluminescence was observed at the injection currents from 40 to 80 mA at room temperature. The output power was 7.3 times as that from p-n homojunction diode at the same driving current due to a good confinement of electrons and holes in the intrinsic ZnO layer. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3374436]
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