Journal
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
Volume 118, Issue 1380, Pages 659-663Publisher
CERAMIC SOC JAPAN-NIPPON SERAMIKKUSU KYOKAI
DOI: 10.2109/jcersj2.118.659
Keywords
Bi(Zn-1/2,Ti-1/2)O-3-BiFeO3; Solid solution; Lead-free material; MOCVD; Crystal structure; Electric property; Epitaxial film; Composition dependency
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Funding
- Ministry of Education, Culture, Sports, Science and Technology, Japan
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Epitaxial xBi(Zn1/2Ti1/2)O-3-(1-x)BiFeO3 films were grown on (100)(c)SrRuO3//(100)SrTiO3 substrates by metal organic chemical vapor deposition (MOCVD). The effects of x value on the crystal structure and the electrical properties were investigated. Constituent phase changed from rhombohedral symmetry to two types of tetragonal ones with different unit cell volume and tetragonality. Rhombohedral phase and the tetragonal phase with smaller tetragonality were not ascertained to transform to cubic phase up to 800 degrees C from high temperature XRD results. Relative dielectric constant measured at room temperature showed the maximum value at x = 0.21 near the phase boundary between tetragonal and rhombohedral symmetries. Leakage current became small when the measurement temperature decreased at 80 K and the ferroelectricity monotonously decreased with increasing x values and was not ascertained above 0.26. (C) 2010 The Ceramic Society of Japan. All rights reserved.
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