Molecular Beam Epitaxy growth and characterization of silicon - Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP)

We report the growth by Molecular Beam Epitaxy (MBE), fabrication and characterization of silicon doped 20 layer InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP) device structures. Two structures with InAs dots of vertical heights of 50 angstrom and 40 angstrom were compared. A 2-8 mu m band normal incidence photo response of the detector with polarization and bias dependence was obtained at 77 K. The specific peak detectivity D* be 0.8 x 10(9) Jones for one of the detectors. (C) 2014 Elsevier B.V. All rights reserved.