Journal
OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING
Volume 46, Issue 5, Pages 483-490Publisher
SPRINGER
DOI: 10.3103/S8756699011050116
Keywords
interference lithography; inorganic chalcogenide photoresist; immersion; etching; periodic structure
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The use of chalcogenide glassy semiconductors as an inorganic vacuum photoresist to obtain periodic relief structures on substrates of various compositions is investigated. It is shown that a chalcogenide resist can be successfully used in combination with interference lithography (including the immersion one) to form one-and two-dimensional submicron-size periodic structures with a spatial frequency of 300 to 8000 mm-1. Technological processes of obtaining relief structures and lithographic masks with submicron sizes of elements on semiconductor, dielectric and metal substrates are developed, and their possible applications are described.
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