Damage accumulation and recovery in C+-irradiated Ti3SiC2

The radiation damage response of Ti3SiC2 irradiated by 700 keV C ions has been investigated over a range of fluences and sample temperatures. The samples were analysed using a series of experimental techniques, including glancing-incidence X-ray diffraction, Rutherford backscattering spectrometry, Raman spectroscopy and scanning electron microscopy. This material exhibits a high level of tolerance to damage, especially at high temperature. Irradiation at temperatures from room temperature to 270 degrees C results in decomposition to TiC; however, this is not observed at temperatures above 270 degrees C. A minimum in the observed damage level is evident for irradiation at a sample temperature of 350 degrees C. At higher temperatures the damage level increases, and results in material which is made up of damaged Ti3SiC2. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.