4.7 Article

Driving force and growth mechanism for spontaneous oxide nanowire formation during the thermal oxidation of metals

Journal

ACTA MATERIALIA
Volume 59, Issue 6, Pages 2491-2500

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2010.12.052

Keywords

CuO; Cu; Nanowires; Oxidation; Stress

Funding

  1. National Science Foundation [CMMI-0825737]
  2. Department of Energy [DE-FG02-09ER46600]
  3. Natural Science Foundation for Outstanding Young Scientists in Shangdong Province, China [JQ201002]
  4. Div Of Civil, Mechanical, & Manufact Inn
  5. Directorate For Engineering [0825737] Funding Source: National Science Foundation

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The spontaneous formation of oxide nanowires (and whiskers) from the oxidation of metals is a well-established phenomenon that has, however, long resisted interpretation. Here we report new fundamental insights into this phenomenon by studying CuO nanowire formation during the thermal oxidation of copper. It is shown that the volume change associated with the solid-state transformation at the CuO/Cu2O interface produces compressive stresses, which stimulate CuO nanowire growth to accompany the interface reaction. A kinetic model based on the stress-driven grain-boundary diffusion followed by rapid surface diffusion of cations on the sidewall of nanowires is developed to account for CuO nanowire growth. The mechanism proposed explains our observations on CuO nanowires and other past observations. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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