Journal
ACTA MATERIALIA
Volume 59, Issue 17, Pages 6743-6750Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2011.07.032
Keywords
Thermoelectric; InGaO3(ZnO)(m); Superlattice; Plasma treatment
Funding
- National Research Foundation of Korea [2011-0000082, 2011-0001650]
- Ministry of Education, Science and Technology (MEST)
- Ministry of Knowledge Economy (MKE)
- Korea Industrial Technology Foundation (KOTEF)
- Ministry of Knowledge Economy (MKE), Republic of Korea [2008-A08-005] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2009-0083009, 2009-0078876, 과C6A1805] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Single-crystal InGaO3(ZnO)(m) thin films with periodic superlattice structures suitable for transparent thermoelectric applications were fabricated using a commercially available c-plane sapphire substrate, an epitaxial ZnO buffer layer, a thermal treatment at 900 degrees C, and an Ar plasma treatment. The introduction of the cpitaxial ZnO buffer layer led to a significant reduction in the lattice mismatch at the interface with the InGaO3(ZnO)(m) films. The sandwich structure of the ZnO/InGaZnO/ZnO resulted in an increase in the ZnO content in the superlattice InGaO3(ZnO)(m) thin films. With respect to thermoelectric properties, the formation of a perfect, layered structure induced an increase in the Seebeck coefficient and, at the same time, a decrease in the thermal conductivity. After complete crystallization, the Ar plasma treatment resulted in a considerable decrease in the electrical resistivity without microstructural changes and without a large decrease in the thermal conductivity. As a result, the thermoelectric properties using n-type oxide semiconductors were dramatically improved. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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