Journal
ACTA MATERIALIA
Volume 59, Issue 6, Pages 2469-2480Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2010.12.050
Keywords
Aluminium; Nitrides; Transmission electron microscopy (TEM); Surface structure; Nitridation
Funding
- Australian Research Council
- Australian Postgraduate Award
Ask authors/readers for more resources
A detailed study was conducted of AlN formed at low temperature on Al with the aid of Mg. The nitride exhibits a bilayer structure comprising a layer forming outward and a layer growing into the Al. In its early stages of formation the outward forming layer consists of fine, randomly aligned AlN crystallites dispersed within an Al matrix. The later forming outer region is primarily composed of fine, columnar hexagonal AlN crystallites aligned in the growth direction, in conjunction with small amounts of fine polycrystalline Al. The inward forming layer comprises nodules, regions or layers of reacted Al, containing a mixture of fine polycrystalline MN and Al, in conjunction with Al exhibiting the original Al crystal structure. A fine-grained, Mg-containing nitride approximately 150 nm thick was observed at the interface of the outward forming layer with either the underlying Al substrate or the inward forming layer when it is present. A mechanism is proposed for the formation of the nitride and the development of the bilayer structure. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available