Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 7, Issue 3, Pages 1602-1607Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am5070443
Keywords
piezoelectric effect; electron tunneling; ZnO nanoarrays; insulator-MgO nanolayer; pressure sensors
Funding
- National Major Research Program of China [2013CB932602]
- Major Project of International Cooperation and Exchanges [2012DFA50990]
- Program of Introducing Talents of Discipline to Universities, NSFC [51232001, 51172022, 51372023, 51372020]
- Research Fund of Co-construction Program from Beijing Municipal Commission of Education
- Fundamental Research Funds for the Central Universities
- Program for Changjiang Scholars and Innovative Research Team in University
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Piezoelectric materials can be applied into electromechanical conversion and attract extensive attention with potential applications in various sensors. Here, we present two types of piezotronic pressure sensors based on ZnO nanoarrays. By introducing an insulating MgO (i-MgO) nanolayer, the on/off current ratio of the sensor is significantly improved up to 10 (5). Furthermore, the sensor shows a high sensitivity of 7.1 x 10 (4) gf(-1), a fast response time of 128 ms. The excellent properties are attributed to the combination of piezoelectric effect of ZnO nanoarrays and electron-tunneling modulation of MgO nanolayer, and the reversible potential barrier height controlled by piezoelectric potential. We further investigate the service behavior of the sensor, which can detect force varying from 3.2 to 27.2 gf. Our research provides a promising approach to boost the performance of nanodevices.
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