Journal
ACS NANO
Volume 12, Issue 8, Pages 8555-8563Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.8b04167
Keywords
ellipsometry; graphene; h-BN; 2D material characterization; chemical vapor deposition; wafer-scale mapping
Categories
Funding
- EPSRC [EP/K016636/1, EP/PS1021X/1]
- EPSRC Cambridge NanoDTC [EP/G037221/1]
- EPSRC Doctoral Training Award [EP/M506485/1]
- German Research Foundation [INST 196/10-1 FUGG]
- EPSRC [EP/P51021X/1] Funding Source: UKRI
Ask authors/readers for more resources
Adequate characterization and quality control of atomically thin layered materials (2DM) has become a serious challenge particularly given the rapid advancements in their large area manufacturing and numerous emerging industrial applications with different substrate requirements. Here, we focus on ellipsometric contrast micrography (ECM), a fast intensity mode within spectroscopic imaging ellipsometry, and show that it can be effectively used for noncontact, large area characterization of 2DM to map coverage, layer number, defects and contamination. We demonstrate atomic layer resolved, quantitative mapping of chemical vapor deposited graphene layers on Si/SiO2-wafers, but also on rough Cu catalyst foils, highlighting that ECM is applicable to all application relevant substrates. We discuss the optimization of ECM parameters for high throughput characterization. While the lateral resolution can be less than 1 pm, we particularly explore fast scanning and demonstrate imaging of a 4 '' graphene wafer in 47 min at 10 mu m lateral resolution, i.e., an imaging speed of 1.7 cm(2)/min. Furthermore, we show ECM of monolayer hexagonal BN (h-BN) and of h-BN/graphene bilayers, highlighting that ECM is applicable to a wide range of 2D layered structures that have previously been very challenging to characterize and thereby fills an important gap in 2DM metrology.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available